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Highly-Polarized Electron Emission from Strain-Compensated Superlattices and Superlattices with High-Valence-Band Splitting ∗

机译：应变补偿超晶格和带高价带分裂的超晶格的高度极化电子发射*

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A. V. Rochansky;
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1. Strain-compensated AllnGaAs-GaAsP superlattices for highly polarized electron emission [J] . A. V. Subashiev, L. G. Gerchikov, Y. A. Mamaev, Applied Physics Letters . 2005,第17期

机译：应变补偿的AllnGaAs-GaAsP超晶格用于高度极化的电子发射
2. Tunable photoelectronic properties of hydrogenated-silicene/halogenated-silicene superlattices for water splitting [J] . Hao Chen, Pinglan Yan, Jin Li, Journal of Applied Physics . 2020,第8期

机译：水分裂氢化硅/卤化 - 硅超晶格的可调谐光电性能
3. Splitting rules of electronic miniband in Fibonacci superlattices: a gap map approach [J] . W.J. Hsueh, C.H. Chen, J.A. Lai The European physical journal, B. Condensed matter physics . 2010,第4期

机译：斐波纳契超晶格中电子微带的分裂规则：间隙图法
4. HIGHLY-POLARIZED ELECTRON EMISSION FROM STRAIN COMPENSATED InAlGaAs -GaAsP SUPERLATTICES [C] . A. V. SUBASHIEV, L. G. OERCHIKOV, Y. A. MAMAEV, Workshop on Polarized Electron Sources and Polarimeters . 2005

机译：从应变补偿的高偏振电子发射inalgaas-gaasp超晶格
5. The effect of anisotropy on type-II superlattices: Application to indium arsenide/gallium antimonide superlattices. [D] . Lau, Wayne Heung. 1995

机译：各向异性对II型超晶格的影响：应用于砷化铟/锑化镓超晶格。
6. Enhancement in electron transport and light emission efficiency of a Si nanocrystal light-emitting diode by a SiCN/SiC superlattice structure [O] . Chul Huh, Bong Kyu Kim, Byoung-Jun Park, 2013

机译：通过SiCN / SiC超晶格结构增强Si纳米晶体发光二极管的电子传输和发光效率
7. Strain-Compensated AlInGaAs-GaAsP Superlattices for Highly-Polarized Electron Emission [O] . Subashiev, A. V., Gerchikov, L. G., Mamaev, Yu. A., 2005

机译：用于高极化的应变补偿alInGaas-Gaasp超晶格电子发射
8. Highly-Polarized Electron Emission from Strain-Compensated Superlattices and Superlattices with High-Valence-Band Splitting [R] . Rochansky, A. V. 2004

机译：应变补偿超晶格和高价带分裂超晶格的高极化电子发射

Highly-Polarized Electron Emission from Strain-Compensated Superlattices and Superlattices with High-Valence-Band Splitting ∗

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